Characteristics of ALD‐ZnO Thin Film Transistor Using H ₂ O and H ₂ O ₂ as Oxygen Sources

O + + H 2 O „ + M ... \ H 5 O 2 + „ + M ...

بررسی عدم استقرار الکترون در پیوندهای هیدروژنی درون مولکولی از نوع o-h…o , n-h…n , s-h…s

چکیده در مطالعه کنونی، عدم استقرار الکترون در پیوندهای هیدروژنی کمک شده رزونانسی درون مولکولی از نوع o-h…o ، n-h…n، s-h…s در سطوح تئوری mp2 و b3lyp با استفاده از سری پایه استاندارد 6-311++g** و تئوری کوانتومی "اتمها در مولکولها" (qtaim) مورد بررسی قرار گرفته است. انرژی پیوندهای هیدروژنی درون مولکولی برای این سیستم ها از روش اسپینوزا که مبتنی بر پارامترهای توپولوژیکال مشتق شده از تئوری aim می ب...

O  M S-o T H

We compare classes of finite relational structures via monadic second-order transductions. More precisely, we study the preorder C ⊑ K : iff C ⊆ τ(K) for some transduction τ. If we only consider classes of incidence structures we can completely describe the resulting hierarchy. It is linear of order type ω + . Each level can be characterised in terms of a suitable variant of tree-width. Canoni...

Transistor Characteristics with Ta O Gate Dielectric

As the gate oxide thickness decreases below 2 nm, the gate leakage current increases dramatically due to direct tunneling current. This large gate leakage current will be an obstacle to reducing gate oxide thickness for the high speed operation of future devices. A MOS transistor with Ta2O5 gate dielectric is fabricated and characterized as a possible replacement for MOS transistors with ultra-...

Effect of Surface Energy on Pentacene Thin-Film Growth and Organic Thin Film Transistor Characteristics

In this study, we discuss pentacene-based organic thin films grown on a self-assembled monolayer (SAM)-treated dielectric with various functional groups and molecular lengths. The functional groups and molecular lengths on the dielectric surface were modified using a SAM treatment followed by ultra violet (UV) light exposure. Surface energy was used to observe the surface polarity variation dur...